Abstract: This letter reports the bias temperature instabilities (BTI) of 4H-SiC CMOS devices with different gate lengths (L) and gate widths (W) for integrated circuits at 400 °C for the first time.
Abstract: The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can ...
A mile-long trail is bringing an immersive after-hours experience to the San Francisco Botanical Garden, where guests can take in art installations, sculptures, lights and music just in time for the ...
SAN FRANCISCO, Nov. 14, 2025 (GLOBE NEWSWIRE) -- Golden Gate Lending Group, a leading boutique bridge-loan brokerage based in California, today announced the official launch of its Buy Before You Sell ...
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