Silicon Semiconductor

R&D advances for the FAMES Pilot Line

CEA-Leti has achieved a major milestone for next-generation chip stacking: fully functional 2.5 V SOI CMOS devices fabricated at 400 °C. The devices match electrical performance of devices fabricated ...
Electronics360

Littelfuse CPC1056N relay offers fast switching, low input current and compact solid-state design

CPC1056N, a compact, high-performance 60 V, 75 mA 1-Form-A solid-state relay (SSR) designed to meet the growing demand for ...
IEEE

Experimental Studies of Millimeter-Wave CMOS LO Circuits for High-Temperature Qubits Operations

Abstract: Operating physical quantum bits (qubits) at higher temperatures—and consequently millimeter-wave frequencies—has the potential to relax cooling ...
IEEE

Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation

Abstract: In this letter, the leakage performances of 4H-SiC CMOS devices, as well as inverter (INV) and NOR logic gate circuits, are evaluated after being exposed to irradiation. It has been observed ...