A lot of capacity for little money? With every generation of flash data carriers, counterfeit cheat packs also come onto the ...
A Comprehensive Physics-Based Compact Model for CNT Thin Film Transistors—Part I: Schottky Contact
Abstract: We present a transistor model to describe the field effect current/voltage (${I}/{V}$ ) relationship in single-wall carbon nanotube thin film transistors (CNT TFTs). Based on the nature of ...
Abstract: I–V characteristics of Schottky barrier diodes (SBDs) in low forward bias and reverse bias voltages are critical in low-power and high-speed SBD-based circuits. Accurate modeling of I–V in ...
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